IPD65R225C7ATMA1 vs IPL65R230C7AUMA1 Perbandingan
Perbandingan bersamaan detil IPD65R225C7ATMA1 dari Infineon dan IPL65R230C7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD65R225C7ATMA1 | IPL65R230C7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Super-junction (SJ) / CoolMOS | Superjunction (CoolMOS C7) |
| Drain-Source Voltage (VDSS) | 650 V | — |
| Continuous Drain Current (ID) at TC | 11 A | — |
| Power Dissipation (PD) at TC | 63 W | — |
| On-Resistance RDS(on) max | 225 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Paket | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount, 4 pins) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + tab) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 10 A |
| Power Dissipation (PD) at Tc | — | 67 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 230 mOhm |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical at VGS=10V] |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| ESD Protection | — | Yes (integrated, per datasheet) |
| Bebas Halogen | — | Yes (per Infineon product page) |