IPD65R225C7ATMA1 vs IPL65R230C7AUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R225C7ATMA1 disebabkan oleh Infineon dan IPL65R230C7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD65R225C7ATMA1 | IPL65R230C7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Super-junction (SJ) / CoolMOS | Superjunction (CoolMOS C7) |
| Drain-Source Voltage (VDSS) | 650 V | — |
| Continuous Drain Current (ID) at TC | 11 A | — |
| Power Dissipation (PD) at TC | 63 W | — |
| On-Resistance RDS(on) max | 225 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gambaran Suhu Operasi | -55°C to +150°C | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount, 4 pins) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 (2 + tab) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 10 A |
| Power Dissipation (PD) at Tc | — | 67 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 230 mOhm |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical at VGS=10V] |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| ESD Protection | — | Yes (integrated, per datasheet) |
| Boson Bebas | — | Yes (per Infineon product page) |