IPD65R225C7ATMA1 vs IPL65R230C7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R225C7ATMA1 sa pamamagitan ng Infineon at IPL65R230C7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD65R225C7ATMA1 | IPL65R230C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Super-junction (SJ) / CoolMOS | Superjunction (CoolMOS C7) |
| Drain-Source Voltage (VDSS) | 650 V | — |
| Continuous Drain Current (ID) at TC | 11 A | — |
| Power Dissipation (PD) at TC | 63 W | — |
| On-Resistance RDS(on) max | 225 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount, 4 pins) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 (2 + tab) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 10 A |
| Power Dissipation (PD) at Tc | — | 67 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 230 mOhm |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical at VGS=10V] |
| Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| ESD Protection | — | Yes (integrated, per datasheet) |
| Wala sa Halogen | — | Yes (per Infineon product page) |