IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Perbandingan

Perbandingan bersamaan detil IPP320N20N3GXKSA1 dari Infineon dan IPP100N12S305AKSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP320N20N3GXKSA1 IPP100N12S305AKSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V [DATA_NEEDED: VGS(th)]
Total Power Dissipation PD at TC=25°C 136 W —
Paket TO-220-3 (PG-TO220-3) through-hole PG-TO220-3-1 (Through Hole)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (3 + Tab) —
Rentang Suhu Kerja -55°C to +175°C -55C to +175C (TJ)
Channel Type N-Channel —
Element Configuration Single —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL Not applicable (through-hole) N/A (Through Hole)
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Jumlah Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (single-pulse)

Spek dan Sumber

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