IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPP320N20N3GXKSA1 sa pamamagitan ng Infineon at IPP100N12S305AKSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPP320N20N3GXKSA1 IPP100N12S305AKSA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V [DATA_NEEDED: VGS(th)]
Total Power Dissipation PD at TC=25°C 136 W —
Packhaging TO-220-3 (PG-TO220-3) through-hole PG-TO220-3-1 (Through Hole)
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pins 3 (3 + Tab) —
Hanay ng Temperature na Operasyon -55°C to +175°C -55C to +175C (TJ)
Channel Type N-Channel —
Element Configuration Single —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL Not applicable (through-hole) N/A (Through Hole)
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Bilang ng Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (single-pulse)

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