IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP320N20N3GXKSA1 disebabkan oleh Infineon dan IPP100N12S305AKSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP320N20N3GXKSA1 IPP100N12S305AKSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V [DATA_NEEDED: VGS(th)]
Total Power Dissipation PD at TC=25°C 136 W —
Kemasan TO-220-3 (PG-TO220-3) through-hole PG-TO220-3-1 (Through Hole)
Jenis Pemasangan Through Hole Through Hole
Bilangan Pin 3 (3 + Tab) —
Gambaran Suhu Operasi -55°C to +175°C -55C to +175C (TJ)
Channel Type N-Channel —
Element Configuration Single —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL Not applicable (through-hole) N/A (Through Hole)
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Kiraan Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (single-pulse)

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