IPW60R041C6FKSA1 vs SPW47N60C3 Perbandingan
Perbandingan bersamaan detil IPW60R041C6FKSA1 dari Infineon dan SPW47N60C3 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R041C6FKSA1 | SPW47N60C3 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS C3 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55C to +150C (junction, typical for CoolMOS C3) |
| Paket | PG-TO247-3-1 (TO-247-3) | TO-247-3-1 (PG-TO247-3-1) through-hole |
| Tipe Mounting | Through Hole | Through Hole |
| Level MSL | Not Applicable (Through-hole) | N/A (through-hole) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Part Number | — | SPW47N60C3 |
| Manufacturer | — | Infineon Technologies AG |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 47 A |
| Power Dissipation (PD) at Tc | — | 415 W |
| RDS(on) (typical) | — | 70 mOhm [DATA_NEEDED: VGS test condition] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: nanocoulombs] |
| Output Capacitance Eoss @ 400V | — | Very low (per C3 series datasheet) |
| Configuration | — | Single N-channel, 3 pins (G, D, S) |
| Series | — | CoolMOS C3 (600V generation) |