IPW60R041C6FKSA1 vs SPW47N60C3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R041C6FKSA1 disebabkan oleh Infineon dan SPW47N60C3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPW60R041C6FKSA1 SPW47N60C3
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Gambaran Suhu Operasi -55°C to +150°C -55C to +150C (junction, typical for CoolMOS C3)
Kemasan PG-TO247-3-1 (TO-247-3) TO-247-3-1 (PG-TO247-3-1) through-hole
Jenis Pemasangan Through Hole Through Hole
Aras MSL Not Applicable (Through-hole) N/A (through-hole)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Series — CoolMOS C3 (600V generation)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga