IPW60R041C6FKSA1 vs SPW47N60C3 比較
詳細並排比較 IPW60R041C6FKSA1 由 Infineon 與 SPW47N60C3 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R041C6FKSA1 | SPW47N60C3 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | NRND | 啟用中 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS C3 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| 工作溫度範圍 | -55°C to +150°C | -55C to +150C (junction, typical for CoolMOS C3) |
| 封裝 | PG-TO247-3-1 (TO-247-3) | TO-247-3-1 (PG-TO247-3-1) through-hole |
| 安裝類型 | Through Hole | Through Hole |
| MSL 等級 | Not Applicable (Through-hole) | N/A (through-hole) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Part Number | — | SPW47N60C3 |
| Manufacturer | — | Infineon Technologies AG |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 47 A |
| Power Dissipation (PD) at Tc | — | 415 W |
| RDS(on) (typical) | — | 70 mOhm [DATA_NEEDED: VGS test condition] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: nanocoulombs] |
| Output Capacitance Eoss @ 400V | — | Very low (per C3 series datasheet) |
| Configuration | — | Single N-channel, 3 pins (G, D, S) |
| Series | — | CoolMOS C3 (600V generation) |