IPW60R041C6FKSA1 vs SPW47N60C3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R041C6FKSA1 sa pamamagitan ng Infineon at SPW47N60C3 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPW60R041C6FKSA1 SPW47N60C3
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle NRND Aktibo
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +150C (junction, typical for CoolMOS C3)
Packhaging PG-TO247-3-1 (TO-247-3) TO-247-3-1 (PG-TO247-3-1) through-hole
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL Not Applicable (Through-hole) N/A (through-hole)
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Series — CoolMOS C3 (600V generation)

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