IR2011SPBF vs 2ED21834S06JXUMA1 Perbandingan

Perbandingan bersamaan detil IR2011SPBF dari Infineon dan 2ED21834S06JXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2011SPBF 2ED21834S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High-Side and Low-Side, Inverting Half-bridge (high-side + low-side)
Jumlah Output 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) —
Rentang Suhu Kerja -40 C to +125 C -40 °C to +125 °C
Paket 8-SOIC (DSO-8) PG-DSO-14-49 (DSO-14)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Jumlah Pin — 14
Status RoHS — Compliant
Standard Reel Quantity — 3000

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