IR2011SPBF vs 2ED21834S06JXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2011SPBF disebabkan oleh Infineon dan 2ED21834S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2011SPBF 2ED21834S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High-Side and Low-Side, Inverting Half-bridge (high-side + low-side)
Bilangan Output 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) —
Gambaran Suhu Operasi -40 C to +125 C -40 °C to +125 °C
Kemasan 8-SOIC (DSO-8) PG-DSO-14-49 (DSO-14)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Bilangan Pin — 14
Status RoHS — Compliant
Standard Reel Quantity — 3000

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