IR2011SPBF vs 2ED21834S06JXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IR2011SPBF sa pamamagitan ng Infineon at 2ED21834S06JXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
2ED21834S06JXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IR2011SPBF | 2ED21834S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Half-Bridge Gate Driver IC | Half-Bridge Gate Driver IC |
| Configuration | High-Side and Low-Side, Inverting | Half-bridge (high-side + low-side) |
| Bilang ng Outputs | 2 | — |
| Offset Voltage (High-Side, max) | 200 V | — |
| Gate Drive Supply Voltage (VCC, VBS) | 10 V to 20 V | — |
| Output Source/Sink Current | 1 A / 1 A (typ) | — |
| Propagation Delay (typ) | 80 ns | — |
| Rise / Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| Input Logic Compatibility | CMOS / LSTTL, down to 3.0 V | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes (on VS pin) | — |
| Hanay ng Temperature na Operasyon | -40 C to +125 C | -40 °C to +125 °C |
| Packhaging | 8-SOIC (DSO-8) | PG-DSO-14-49 (DSO-14) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Tube / Reel Packaging | Tube (per Infineon PBF convention) | — |
| Maximum Offset Voltage (VBS) | — | 650 V |
| Typical Sink Current | — | 2.5 A |
| Typical Source Current | — | 2.5 A |
| Input Logic | — | Non-Inverting |
| Integrated Bootstrap Diode | — | Yes |
| Technology | — | SOI (Silicon-On-Insulator) high-voltage |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Bilang ng Pins | — | 14 |
| Tindminan RoHS | — | Compliant |
| Standard Reel Quantity | — | 3000 |