IR2011SPBF vs 2ED21834S06JXUMA1 比較

詳細並排比較 IR2011SPBF 由 Infineon 與 2ED21834S06JXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 啟用中

規格比較

參數 IR2011SPBF 2ED21834S06JXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High-Side and Low-Side, Inverting Half-bridge (high-side + low-side)
輸出數量 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) —
工作溫度範圍 -40 C to +125 C -40 °C to +125 °C
封裝 8-SOIC (DSO-8) PG-DSO-14-49 (DSO-14)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
腳位數 — 14
RoHS 狀態 — Compliant
Standard Reel Quantity — 3000

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