IR21531STRPBF vs IRS2153DSTRPBF Perbandingan

Perbandingan bersamaan detil IR21531STRPBF dari Infineon dan IRS2153DSTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21531STRPBF IRS2153DSTRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge —
Driver Type High-side and Low-side, self-oscillating —
Jumlah Output 2 (high-side, low-side) —
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
Waktu naik 80 ns —
Waktu Menurun 45 ns —
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) —
Suhu Kerja -40C to +125C —
Paket 8-pin SOIC (SO-8) 8-pin SOIC
Tipe Mounting Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
Status RoHS Compliant (ROHS3) Compliant
Topologi — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
Rentang Suhu Kerja — -40C to +125C
Technology — HVIC + latch-immune CMOS
Lead-Free — Yes

Spek dan Sumber

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