IR21531STRPBF vs IRS2153DSTRPBF 比較

詳細並排比較 IR21531STRPBF 由 Infineon 與 IRS2153DSTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR21531STRPBF IRS2153DSTRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge —
Driver Type High-side and Low-side, self-oscillating —
輸出數量 2 (high-side, low-side) —
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
上升時間 80 ns —
下降時間 45 ns —
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) —
工作溫度 -40C to +125C —
封裝 8-pin SOIC (SO-8) 8-pin SOIC
安裝類型 Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
RoHS 狀態 Compliant (ROHS3) Compliant
拓撲 — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
工作溫度範圍 — -40C to +125C
Technology — HVIC + latch-immune CMOS
Lead-Free — Yes

資料表與資源

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