IRF2907ZSTRLPBF vs IRF540NSTRLPBF Perbandingan
Perbandingan bersamaan detil IRF2907ZSTRLPBF dari Infineon dan IRF540NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF2907ZSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Arus Alir Berlanjut (TC=25°C) | 170 A | — |
| Arus Alir Berlanjut (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | HEXFET (IR MOSFET) |
| Paket | D2PAK (TO-263AB) surface mount | D2PAK (TO-263), surface mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Tipe Mounting | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | Tape & Reel (13-inch reel) |
| Lead-Free | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |