IRF2907ZSTRLPBF vs IRF540NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2907ZSTRLPBF disebabkan oleh Infineon dan IRF540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF2907ZSTRLPBF IRF540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Kumpal Tetap (TC=25°C) 170 A —
Arus Kumpal Tetap (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Technology IR HEXFET / IR MOSFET HEXFET (IR MOSFET)
Kemasan D2PAK (TO-263AB) surface mount D2PAK (TO-263), surface mount
Kiraan Pin 3 (Gate, Drain, Source) —
Jenis Pemasangan Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) Tape & Reel (13-inch reel)
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 33 A
Pulsed Drain Current (Idm) — 110 A (per datasheet pulse curve)
On-Resistance Rds(on) max at Vgs=10V — 44 mOhm
Gate Threshold Voltage Vgs(th) — 2.0 V to 4.0 V
Total Gate Charge Qg — 47.3 nC (typical)
Power Dissipation (Pd) at Tc=25C — 130 W
Gambaran Suhu Operasi — -55 C to +175 C
Avalanche Energy Rated — Yes (HEXFET ruggedized)

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