IRF2907ZSTRLPBF vs IRF540NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF2907ZSTRLPBF sa pamamagitan ng Infineon at IRF540NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF2907ZSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Patuloy na Drain Current (TC=25°C) | 170 A | — |
| Patuloy na Drain Current (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | HEXFET (IR MOSFET) |
| Packhaging | D2PAK (TO-263AB) surface mount | D2PAK (TO-263), surface mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Uri ng Pagpapasok | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | Tape & Reel (13-inch reel) |
| Lead-Free | Yes (PBF suffix) | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |