IRF2907ZSTRLPBF vs IRF540NSTRLPBF 比較
詳細並排比較 IRF2907ZSTRLPBF 由 Infineon 與 IRF540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF2907ZSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| 連續汲極電流 (TC=25°C) | 170 A | — |
| 連續汲極電流 (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | HEXFET (IR MOSFET) |
| 封裝 | D2PAK (TO-263AB) surface mount | D2PAK (TO-263), surface mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| 安裝類型 | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | Tape & Reel (13-inch reel) |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| 工作溫度範圍 | — | -55 C to +175 C |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |