IRF9Z34NSTRRPBF vs IRF9Z34NPBF Perbandingan

Perbandingan bersamaan detil IRF9Z34NSTRRPBF dari Infineon dan IRF9Z34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF9Z34NSTRRPBF IRF9Z34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Obsolete Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF9Z34NSTRRPBF —
Tipe Transistor P-Channel MOSFET (HexFET) —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Gate Threshold Voltage (Vgs(th)) -2 V to -4 V [DATA_NEEDED: Vgs(th) typical/min/max]
Power Dissipation (Pd) 68 W (Tc) —
Power Dissipation (Ta) 3.8 W —
Thermal Resistance, Junction-to-Case (RthJC) 2.2 K/W (max) —
Maximum Junction Temperature 175 °C —
Paket / Case D2PAK (TO-263-3), 3-pin (2 + Tab) —
Tipe Mounting Surface Mount Through Hole
Operating Frequency Optimized for switching below 100 kHz —
Avalanche Rated Yes (fully avalanche rated) —
Status RoHS Compliant (Pb-free suffix PBF) Compliant
Packaging Tape & Reel (STR suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Rentang Suhu Kerja — -55C to +175C (junction)
Paket — TO-220AB (through-hole, 3-pin)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology — HEXFET (5th generation)
Lead-Free / Halogen-Free — Yes (PBF suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon