IRF9Z34NSTRRPBF vs IRF9Z34NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF9Z34NSTRRPBF sa pamamagitan ng Infineon at IRF9Z34NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF9Z34NSTRRPBF IRF9Z34NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Obsolete Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF9Z34NSTRRPBF —
Uri ng Transistor P-Channel MOSFET (HexFET) —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Gate Threshold Voltage (Vgs(th)) -2 V to -4 V [DATA_NEEDED: Vgs(th) typical/min/max]
Power Dissipation (Pd) 68 W (Tc) —
Power Dissipation (Ta) 3.8 W —
Thermal Resistance, Junction-to-Case (RthJC) 2.2 K/W (max) —
Maximum Junction Temperature 175 °C —
Packhaging / Kaso D2PAK (TO-263-3), 3-pin (2 + Tab) —
Uri ng Pagpapasok Surface Mount Through Hole
Operating Frequency Optimized for switching below 100 kHz —
Avalanche Rated Yes (fully avalanche rated) —
Tindminan RoHS Compliant (Pb-free suffix PBF) Compliant
Packaging Tape & Reel (STR suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Hanay ng Temperature na Operasyon — -55C to +175C (junction)
Packhaging — TO-220AB (through-hole, 3-pin)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology — HEXFET (5th generation)
Lead-Free / Halogen-Free — Yes (PBF suffix)

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