IRF9Z34NSTRRPBF vs IRF9Z34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9Z34NSTRRPBF disebabkan oleh Infineon dan IRF9Z34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9Z34NSTRRPBF IRF9Z34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Obsolete Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF9Z34NSTRRPBF —
Jenis Transistor P-Channel MOSFET (HexFET) —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Gate Threshold Voltage (Vgs(th)) -2 V to -4 V [DATA_NEEDED: Vgs(th) typical/min/max]
Power Dissipation (Pd) 68 W (Tc) —
Power Dissipation (Ta) 3.8 W —
Thermal Resistance, Junction-to-Case (RthJC) 2.2 K/W (max) —
Maximum Junction Temperature 175 °C —
Kemasan / Case D2PAK (TO-263-3), 3-pin (2 + Tab) —
Jenis Pemasangan Surface Mount Through Hole
Operating Frequency Optimized for switching below 100 kHz —
Avalanche Rated Yes (fully avalanche rated) —
Status RoHS Compliant (Pb-free suffix PBF) Compliant
Packaging Tape & Reel (STR suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Gambaran Suhu Operasi — -55C to +175C (junction)
Kemasan — TO-220AB (through-hole, 3-pin)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology — HEXFET (5th generation)
Lead-Free / Halogen-Free — Yes (PBF suffix)

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