IRFR220NPBF vs IRFR4620TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR220NPBF dari Infineon dan IRFR4620TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR220NPBF IRFR4620TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Tipe Mounting Surface Mount Surface Mount
Paket / Case TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Jumlah Pin 3 (Gate, Drain, Source) plus tab —
Level MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Suhu Kerja — -55C to +175C
Lead Free — Yes
Status RoHS — Compliant

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