IRFR220NPBF vs IRFR4620TRLPBF 比較

詳細並排比較 IRFR220NPBF 由 Infineon 與 IRFR4620TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR220NPBF IRFR4620TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
安裝類型 Surface Mount Surface Mount
封裝 / 外殼 TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
工作溫度範圍 -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
腳位數 3 (Gate, Drain, Source) plus tab —
MSL 等級 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
工作溫度 — -55C to +175C
Lead Free — Yes
RoHS 狀態 — Compliant

資料表與資源

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