IRFR220NPBF vs IRFR4620TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NPBF disebabkan oleh Infineon dan IRFR4620TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NPBF IRFR4620TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Kiraan Pin 3 (Gate, Drain, Source) plus tab —
Aras MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Suhu Operasi — -55C to +175C
Lead Free — Yes
Status RoHS — Compliant

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