IRFR220NPBF vs IRFR4620TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR220NPBF sa pamamagitan ng Infineon at IRFR4620TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR220NPBF IRFR4620TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging / Kaso TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Hanay ng Temperature na Operasyon -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Bilang ng Pin 3 (Gate, Drain, Source) plus tab —
Level ng MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Temperature na Operasyon — -55C to +175C
Lead Free — Yes
Tindminan RoHS — Compliant

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