IRFR3806TRPBF vs IRFH8318TRPBF Perbandingan

Perbandingan bersamaan detil IRFR3806TRPBF dari Infineon dan IRFH8318TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3806TRPBF IRFH8318TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 41 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
Paket / Case TO-252AA (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET™ (N-Channel Trench MOSFET)
Rentang Suhu Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25°C — 27 A
Continuous Drain Current (ID) at Tc=25°C — 120 A
On-Resistance RDS(on) max at VGS=10V — 3.1 mΩ
Power Dissipation (Ta) — 3.6 W
Power Dissipation (Tc) — 59 W
Paket — PQFN 5x6 (SuperSO8, 8-PowerTDFN)
Suhu Kerja — -55°C to +150°C
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — 1
Description — Synchronous MOSFET for high-frequency buck converters

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