IRFR3806TRPBF vs IRFH8318TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3806TRPBF sa pamamagitan ng Infineon at IRFH8318TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR3806TRPBF IRFH8318TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 41 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
Packhaging / Kaso TO-252AA (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET™ (N-Channel Trench MOSFET)
Hanay ng Temperature na Operasyon -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25°C — 27 A
Continuous Drain Current (ID) at Tc=25°C — 120 A
On-Resistance RDS(on) max at VGS=10V — 3.1 mΩ
Power Dissipation (Ta) — 3.6 W
Power Dissipation (Tc) — 59 W
Packhaging — PQFN 5x6 (SuperSO8, 8-PowerTDFN)
Temperature na Operasyon — -55°C to +150°C
Tindminan RoHS — Compliant
Lead-Free — Yes
Level ng MSL — 1
Description — Synchronous MOSFET for high-frequency buck converters

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