IRFR3806TRPBF vs IRFH8318TRPBF 比較
詳細並排比較 IRFR3806TRPBF 由 Infineon 與 IRFH8318TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3806TRPBF | IRFH8318TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 41 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| 工作溫度範圍 | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| 封裝 | — | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| 工作溫度 | — | -55°C to +150°C |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 等級 | — | 1 |
| Description | — | Synchronous MOSFET for high-frequency buck converters |