IRFR3806TRPBF vs IRFH8318TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3806TRPBF disebabkan oleh Infineon dan IRFH8318TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3806TRPBF | IRFH8318TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 41 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Kemasan / Case | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| Kemasan | — | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| Suhu Operasi | — | -55°C to +150°C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Aras MSL | — | 1 |
| Description | — | Synchronous MOSFET for high-frequency buck converters |