ISC151N08NM6ATMA1 vs IAUS300N08S5N011TATMA1 Perbandingan
Perbandingan bersamaan detil ISC151N08NM6ATMA1 dari Infineon dan IAUS300N08S5N011TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC151N08NM6ATMA1 | IAUS300N08S5N011TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Alir Berlanjut (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS-5 (trench MOSFET) |
| Paket | PG-TDSON-8 FL | PG-HDSOP-16-2 (HDSOP-16) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Kerja | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 300 A |
| Power Dissipation (P_D, Tc) | — | 375 W |
| R_DS(on) Max @ V_GS=10V | — | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | — | 231 nC |
| Output Capacitance (C_OSS) | — | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | — | 16.25 nF (typ) |
| Rentang Suhu Kerja | — | -55 C to +175 C (Tj) |
| Number of Channels | — | 1 |
| Automotive Qualified | — | Yes (Infineon automotive part) |