ISC151N08NM6ATMA1 vs IAUS300N08S5N011TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IAUS300N08S5N011TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC151N08NM6ATMA1 | IAUS300N08S5N011TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Patuloy na Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS-5 (trench MOSFET) |
| Packhaging | PG-TDSON-8 FL | PG-HDSOP-16-2 (HDSOP-16) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | -55 °C to +175 °C | — |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 300 A |
| Power Dissipation (P_D, Tc) | — | 375 W |
| R_DS(on) Max @ V_GS=10V | — | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | — | 231 nC |
| Output Capacitance (C_OSS) | — | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | — | 16.25 nF (typ) |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (Tj) |
| Number of Channels | — | 1 |
| Automotive Qualified | — | Yes (Infineon automotive part) |