ISC151N08NM6ATMA1 vs IAUS300N08S5N011TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IAUS300N08S5N011TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC151N08NM6ATMA1 | IAUS300N08S5N011TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Kumpal Tetap (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS-5 (trench MOSFET) |
| Kemasan | PG-TDSON-8 FL | PG-HDSOP-16-2 (HDSOP-16) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Operasi | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 300 A |
| Power Dissipation (P_D, Tc) | — | 375 W |
| R_DS(on) Max @ V_GS=10V | — | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | — | 231 nC |
| Output Capacitance (C_OSS) | — | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | — | 16.25 nF (typ) |
| Gambaran Suhu Operasi | — | -55 C to +175 C (Tj) |
| Number of Channels | — | 1 |
| Automotive Qualified | — | Yes (Infineon automotive part) |