ISC151N08NM6ATMA1 vs IAUS300N08S5N011TATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IAUS300N08S5N011TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active
Infineon
IAUS300N08S5N011TATMA1 IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon

IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon

IAUS300N08S5N011TATMA1 βœ“ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IAUS300N08S5N011TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.65
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (TA=25Β°C) 9.2 A β€”
Continuous Drain Current (TC=25Β°C) 37 A β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 48 W β€”
On-Resistance RDS(on) max 15.1 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Technology OptiMOS 6 OptiMOS-5 (trench MOSFET)
Package PG-TDSON-8 FL PG-HDSOP-16-2 (HDSOP-16)
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Channel Mode Enhancement β€”
Operating Temperature -55 Β°C to +175 Β°C β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 80 V
Continuous Drain Current (I_D, Tj) β€” 300 A
Power Dissipation (P_D, Tc) β€” 375 W
R_DS(on) Max @ V_GS=10V β€” 1.1 mOhm
Gate Threshold Voltage (V_GS(th)) β€” 3 V (max)
Total Gate Charge (Q_G) @ 10V β€” 231 nC
Output Capacitance (C_OSS) β€” 130 pF (typ)
Reverse Transfer Capacitance (C_RSS) β€” 16.25 nF (typ)
Operating Temperature Range β€” -55 C to +175 C (Tj)
Number of Channels β€” 1
Automotive Qualified β€” Yes (Infineon automotive part)

Datasheets & Resources

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