K4A8G085WB-BICH vs K4A8G045WB Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BICH dari Samsung Electronics dan K4A8G045WB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BICH | K4A8G045WB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8Gb | 8 Gb |
| Organisasi | 1G x 8 | 2G x 4 |
| Tegangan Pemuat | 1.2V | 1.2 V |
| Laju Data | 2400 Mbps (DDR4-2400) | 2133 Mbps |
| Paket | 78-ball FBGA | 78-ball FBGA |
| Suhu Kerja | 0°C to 85°C | 0 C to +85 C |
| Max Supply Current | 170mA | 211.7 mA |
| Burst Length | BL8, BL16 | — |
| Latensi CAS | Programmable | — |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Die Revision | B-die | — |
| Refresh Cycles | — | 8192 |
| Tipe Mounting | — | Surface Mount |
| Number of Terminals | — | 78 |
| Clocking | — | Differential clock (CK / CK#) |
| On-Die Termination | — | Yes (ODT pin) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Programmable CWL | — | Yes |
| Internal (Self) Calibration | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |