K4AAG165WM-BCTD vs K4AAG165WA-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG165WM-BCTD dari Samsung Electronics dan K4AAG165WA-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG165WM-BCTD | K4AAG165WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organisasi | 1G x 16 | — |
| Speed | 2666 Mbps | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Suhu Kerja | 0C to +85C | -40C to +95C |
| Paket | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Antarmuka | SSTL-12 | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Tipe Mounting | Surface Mount (BGA solder reflow) | Surface Mount |
| Status RoHS | RoHS (per LCSC listing) | Compliant |
| Ukuran Memori | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Laju Data | — | 3200 Mbps (DDR4-3200) |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Tipe Antarmuka | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |