K4AAG165WM-BCTD vs K4AAG165WA-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WM-BCTD disebabkan oleh Samsung Electronics dan K4AAG165WA-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WM-BCTD | K4AAG165WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organisasi | 1G x 16 | — |
| Speed | 2666 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Suhu Operasi | 0C to +85C | -40C to +95C |
| Kemasan | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Antaramuka | SSTL-12 | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Jenis Pemasangan | Surface Mount (BGA solder reflow) | Surface Mount |
| Status RoHS | RoHS (per LCSC listing) | Compliant |
| Saiz Ingatan | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Kadar Data | — | 3200 Mbps (DDR4-3200) |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Jenis Antaramuka | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |