K4AAG165WM-BCTD vs K4AAG165WA-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WM-BCTD sa pamamagitan ng Samsung Electronics at K4AAG165WA-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WM-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
K4AAG165WM-BCTD ✓ NakahandaSamsung Electronics
K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
K4AAG165WA-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WM-BCTD | K4AAG165WA-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organisasyon | 1G x 16 | — |
| Speed | 2666 Mbps | — |
| Volte ng Pagbibigay | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Temperature na Operasyon | 0C to +85C | -40C to +95C |
| Packhaging | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Interface | SSTL-12 | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Uri ng Pagpapasok | Surface Mount (BGA solder reflow) | Surface Mount |
| Tindminan RoHS | RoHS (per LCSC listing) | Compliant |
| Laki ng Memory | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Rate ng Data | — | 3200 Mbps (DDR4-3200) |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Uri ng Interface | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |