K4B4G1646 vs K4B4G1646Q Perbandingan
Perbandingan bersamaan detil K4B4G1646 dari Samsung Electronics dan K4B4G1646Q dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646 | K4B4G1646Q |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3 SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Antarmuka | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Tegangan Pemuat | 1.5 V (DDR3L variants 1.35 V) | 1.35V |
| Paket | 96-FBGA | 96-ball FBGA |
| Tipe Mounting | Surface Mount | — |
| Suhu Kerja | 0C to +95C | [DATA_NEEDED: Operating temperature range] |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 4Gb |
| Lebar Bus Data | — | 16 bits |
| Laju Data | — | 1866 Mbps (PC3-14900) |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| Latensi CAS | — | Programmable |