M29F800FT55N3E2 vs M29F400FT55M3E2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3E2 dari Micron Technology dan M29F400FT55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron
M29F400FT55M3E2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3E2 | M29F400FT55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | — |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | 5 V |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| Suhu Kerja | -40C to +125C | -40 C to +125 C |
| Paket | 48-TSOP I | 44-SO (SOP-44) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| Status RoHS | Compliant (E suffix = lead-free/RoHS) | Compliant |
| Ukuran Memori | — | 4 Mbit (4194 kbits) |
| Organisasi | — | 512K x 8 / 256K x 16 |
| Number of Words | — | 256 k |
| Bits per Word | — | 16 bits |
| Programming | — | Embedded byte/word program algorithms |
| Erase | — | Embedded program/erase controller, block erase |
| Boot Block | — | Top boot block |
| Packaging | — | Tray |