M29F800FT55N3E2 vs M29F400FT55M3E2 比較
詳細並排比較 M29F800FT55N3E2 由 Micron Technology 與 M29F400FT55M3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FT55N3E2 | M29F400FT55M3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | — |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | 5 V |
| 介面 | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| 工作溫度 | -40C to +125C | -40 C to +125 C |
| 封裝 | 48-TSOP I | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS 狀態 | Compliant (E suffix = lead-free/RoHS) | Compliant |
| 記憶體容量 | — | 4 Mbit (4194 kbits) |
| 組織 | — | 512K x 8 / 256K x 16 |
| Number of Words | — | 256 k |
| Bits per Word | — | 16 bits |
| Programming | — | Embedded byte/word program algorithms |
| Erase | — | Embedded program/erase controller, block erase |
| Boot Block | — | Top boot block |
| Packaging | — | Tray |