M29W128GL70ZS3E vs M29W128GL70ZA3E Perbandingan
Perbandingan bersamaan detil M29W128GL70ZS3E dari Micron Technology dan M29W128GL70ZA3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | M29W128GL70ZS3E | M29W128GL70ZA3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Antarmuka | Parallel | Parallel |
| Ukuran Memori | 128 Mbit (16 MB) | — |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V (3 V class) | 3V / 3.3V |
| Paket | 64-FBGA (11x13 mm) | 64-TBGA (10x13 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +125C (per distributor code data) | -40C to +125C |
| Family | M29W128G (GL variant) | — |
| Bus Width | x16 | — |
| Boot Block Architecture | Bottom boot (GL) | — |
| Program/Erase Supply | Single supply (no separate VPP required) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Density | — | 128 Mbit |
| Organisasi | — | 16M x 8 / 8M x 16 |
| Boot Block Location | — | Bottom boot (GL variant) |
| Bus Width Selection | — | BYTE pin (x8/x16) |
| Packaging | — | Tray |
| Product Longevity Program | — | No |
| FBGA Code | — | [DATA_NEEDED: FBGA Code] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |