M29W128GL70ZS3E vs M29W128GL70ZA3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GL70ZS3E disebabkan oleh Micron Technology dan M29W128GL70ZA3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29W128GL70ZS3E | M29W128GL70ZA3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Antaramuka | Parallel | Parallel |
| Saiz Ingatan | 128 Mbit (16 MB) | — |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3 V class) | 3V / 3.3V |
| Kemasan | 64-FBGA (11x13 mm) | 64-TBGA (10x13 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +125C (per distributor code data) | -40C to +125C |
| Family | M29W128G (GL variant) | — |
| Bus Width | x16 | — |
| Boot Block Architecture | Bottom boot (GL) | — |
| Program/Erase Supply | Single supply (no separate VPP required) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Density | — | 128 Mbit |
| Organisasi | — | 16M x 8 / 8M x 16 |
| Boot Block Location | — | Bottom boot (GL variant) |
| Bus Width Selection | — | BYTE pin (x8/x16) |
| Packaging | — | Tray |
| Product Longevity Program | — | No |
| FBGA Code | — | [DATA_NEEDED: FBGA Code] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |