M29W128GL70ZS3E vs M29W128GL70ZA3E 比較
詳細並排比較 M29W128GL70ZS3E 由 Micron Technology 與 M29W128GL70ZA3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W128GL70ZS3E | M29W128GL70ZA3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| 介面 | Parallel | Parallel |
| 記憶體容量 | 128 Mbit (16 MB) | — |
| Access Time | 70 ns | 70 ns |
| 供應電壓 | 2.7 V to 3.6 V (3 V class) | 3V / 3.3V |
| 封裝 | 64-FBGA (11x13 mm) | 64-TBGA (10x13 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40C to +125C (per distributor code data) | -40C to +125C |
| Family | M29W128G (GL variant) | — |
| Bus Width | x16 | — |
| Boot Block Architecture | Bottom boot (GL) | — |
| Program/Erase Supply | Single supply (no separate VPP required) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Density | — | 128 Mbit |
| 組織 | — | 16M x 8 / 8M x 16 |
| Boot Block Location | — | Bottom boot (GL variant) |
| Bus Width Selection | — | BYTE pin (x8/x16) |
| Packaging | — | Tray |
| Product Longevity Program | — | No |
| FBGA Code | — | [DATA_NEEDED: FBGA Code] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |