M29W128GL70ZS3E vs M29W128GL70ZA3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W128GL70ZS3E sa pamamagitan ng Micron Technology at M29W128GL70ZA3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ NakahandaMicron Technology
M29W128GL70ZA3E - 128Mb NOR Flash 70ns 64-TBGA | Micron
M29W128GL70ZA3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W128GL70ZS3E | M29W128GL70ZA3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash |
| Interface | Parallel | Parallel |
| Laki ng Memory | 128 Mbit (16 MB) | — |
| Access Time | 70 ns | 70 ns |
| Volte ng Pagbibigay | 2.7 V to 3.6 V (3 V class) | 3V / 3.3V |
| Packhaging | 64-FBGA (11x13 mm) | 64-TBGA (10x13 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +125C (per distributor code data) | -40C to +125C |
| Family | M29W128G (GL variant) | — |
| Bus Width | x16 | — |
| Boot Block Architecture | Bottom boot (GL) | — |
| Program/Erase Supply | Single supply (no separate VPP required) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Density | — | 128 Mbit |
| Organisasyon | — | 16M x 8 / 8M x 16 |
| Boot Block Location | — | Bottom boot (GL variant) |
| Bus Width Selection | — | BYTE pin (x8/x16) |
| Packaging | — | Tray |
| Product Longevity Program | — | No |
| FBGA Code | — | [DATA_NEEDED: FBGA Code] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |