M29W800FB70N3E vs M29F800FB55N3E2 Perbandingan
Perbandingan bersamaan detil M29W800FB70N3E dari Micron Technology dan M29F800FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W800FB70N3E | M29F800FB55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash, SLC, Parallel |
| Density | 8 Mbit (8388608 bits) | — |
| Organisasi | 512K x 16 / 1M x 8 | Bottom boot (B suffix) |
| Lebar Bus Data | x8/x16 (BYTE# selectable) | 8-bit or 16-bit (BYTE# selectable) |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase and read | — |
| Programming Time | 10 us per byte/word (typical) | — |
| Memory Blocks | 19 blocks, 1 boot block (bottom - FB configuration) | — |
| Antarmuka | Parallel | Parallel |
| Suhu Kerja | -40C to +125C | Up to +125 C (Auto Grade 3 suffix) |
| Paket | 48-TSOP (12 x 20 mm), TSOP I | 48-pin TSOP Type I (N suffix) |
| Jumlah Pin | 48 | — |
| Tipe Mounting | Surface Mount | Surface Mount (SMD/SMT) |
| Status RoHS | RoHS compliant (plastic TSOP-48) | Compliant (E suffix) |
| Product Longevity Program | No | — |
| FBGA Code | N/A | — |
| Chipset Validation | N/A | — |
| Ukuran Memori | — | 8 Mbit (1 M x 8 / 512 K x 16) |
| Supply Voltage Min | — | 4.5 V |
| Supply Voltage Max | — | 5.5 V |
| Packing | — | Tray (blank suffix) |
| Programming Operations | — | READ, ERASE, PROGRAM via command set |
| Write Protection | — | Block protection with lockable boot block |
| Status Output | — | RB# (Ready/Busy) |