M29W800FB70N3E vs M29F800FB55N3E2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FB70N3E disebabkan oleh Micron Technology dan M29F800FB55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ Aktif
Micron Technology
M29F800FB55N3E2 M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W800FB70N3E M29F800FB55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash NOR Flash, SLC, Parallel
Density 8 Mbit (8388608 bits) —
Organisasi 512K x 16 / 1M x 8 Bottom boot (B suffix)
Lebar Bus Data x8/x16 (BYTE# selectable) 8-bit or 16-bit (BYTE# selectable)
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
Antaramuka Parallel Parallel
Suhu Operasi -40C to +125C Up to +125 C (Auto Grade 3 suffix)
Kemasan 48-TSOP (12 x 20 mm), TSOP I 48-pin TSOP Type I (N suffix)
Kiraan Pin 48 —
Jenis Pemasangan Surface Mount Surface Mount (SMD/SMT)
Status RoHS RoHS compliant (plastic TSOP-48) Compliant (E suffix)
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Saiz Ingatan — 8 Mbit (1 M x 8 / 512 K x 16)
Supply Voltage Min — 4.5 V
Supply Voltage Max — 5.5 V
Packing — Tray (blank suffix)
Programming Operations — READ, ERASE, PROGRAM via command set
Write Protection — Block protection with lockable boot block
Status Output — RB# (Ready/Busy)

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