H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix
부품 번호: H5AN8G8NCJR-VKC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $35.16 | $35.16 |
| 10 | $33.4 | $334.00 |
| 100 | $31.65 | $3,165.00 |
| 500 | $29.89 | $14,945.00 |
| 1,000 | $28.13 | $28,130.00 |
H5AN8G8NCJR-VKC 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a volatile memory technology in the broader hierarchy of memory ICs -> DRAM -> synchronous DRAM. It transfers data on both rising and falling edges of the clock and sits at the heart of main-memory subsystems requiring large density and high bandwidth.
Key features of this device include fully synchronous operation referenced to both rising and falling edges of the clock, auto self-refresh, a data mask function, dynamic on-chip termination (ODT), an asynchronous reset function, ZQ calibration, write leveling, CRC, and auto precharge. These features support JEDEC-standard DDR4 platform designs and simplify controller integration.
Technically, the part uses SK hynix CMOS DDR4 process technology with an 8-bank architecture, 1.2V-class core operation that lowers power versus DDR3, and per-ball FBGA packaging that improves signal integrity and thermal performance at high data rates. The -VKC speed bin supports DDR4-2666 (1.6 GHz clock domain, 2666 Mbps/pin) with typical operating current around 30 mA and low standby current around 3 mA.
Typical applications include desktop and notebook main memory modules, servers and workstations, industrial PCs, networking equipment, embedded systems, and set-top boxes where 8Gb density per chip and DDR4 bandwidth are required.
Design consideration: DDR4 routing demands length-matched, fly-by terminated command/address lines, dynamic ODT tuning, and ZQ calibration resistor placement close to the ball for signal integrity.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: H5AN8G8NCJR-VKC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G8NCJR-VKC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, Organization, RoHS Status, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN8G8NAFR-VKC
✅ 드롭인✓ 재고 있음
$4.15 / 개
데이터시트 보기 →H5AN8G8NCJR-UHC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.88 / 개
데이터시트 보기 →H5AN8G8NCJR-RDC
✅ 드롭인✓ 재고 있음
$2.7 / 개
데이터시트 보기 →H5AN8G8NCJR-PBC
✅ 드롭인✓ 재고 있음
$2.4 / 개
데이터시트 보기 →H5AN8G8NCJR-XNC
✅ 드롭인✓ 재고 있음
$30.6923 / 개
데이터시트 보기 →K4A8G085WC-BCWE
✅ 드롭인✓ 재고 있음
$7.3828 / 개
데이터시트 보기 →MT40A1G8AG-062E
✅ 드롭인✓ 재고 있음
$3.1 / 개
데이터시트 보기 →H5AN8G8NCJR-VKC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM (volatile) |
| 메모리 크기 | 8 Gbit |
| Memory Organization | 1G x 8 |
| 데이터 속도 | 2666 Mbps/pin |
| Clock Frequency | 1.6 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | 30 mA |
| Standby Current (typ) | 3 mA |
| 동작 온도 | 0C to +85C |
| 패키지 | FBGA-78 (78-ball fine-pitch BGA) |
| 실장 유형 | Surface Mount |
| 인터페이스 | Parallel (DDR4) |
| Auto Self-Refresh | Yes |
| Data Mask Function | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| Asynchronous Reset | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Auto Precharge | Yes |
| RoHS 상태 | Compliant |
H5AN8G8NCJR-VKC fbga-78 (78-ball fine-pitch bga) 핀 구성 가이드
H5AN8G8NCJR-VKC(fbga-78 (78-ball fine-pitch bga) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN8G8NCJR-VKC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN8G8NCJR-VKC 적합 용도: 6 애플리케이션s: Desktop and Notebook Main Memory Modules, Server and Workstation Memory, Industrial PCs and Embedded Controllers, Networking and Telecom Equipment, Set-Top Boxes and Smart TVs, Test and Measurement Instruments.
Desktop and Notebook Main Memory Modules
The H5AN8G8NCJR-VKC is ideally suited for main memory applications requiring large density and high bandwidth, making it a natural component for UDIMM and SODIMM module builds. Its 8Gb density in a 1G x 8 organization lets a 16-chip module deliver 16 GB, while the DDR4-2666 data rate and 1.6 GHz clock domain supply up to 21.3 GB/s per 64-bit channel. Dynamic on-chip termination, write leveling, and ZQ calibration are all required by the DDR4 module standard, and this device provides them natively. The 1.14V to 1.26V supply keeps module power within the DDR4 budget; multi-rank designs should budget roughly 30 mA per device of operating current in power calculations.
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Server and Workstation Memory
Server RDIMM and workstation memory subsystems benefit from the H5AN8G8NCJR-VKC's combination of 8Gb density, DDR4-2666 bandwidth, and CRC support. The CRC function helps protect command/address integrity on multi-rank, heavily loaded buses where crosstalk is severe, and asynchronous reset allows deterministic recovery across reboots. SK hynix 8Gb DDR4 devices offer fully synchronous operation referenced to both clock edges, matching standard server memory-controller training flows. For high-capacity builds, pair this device with 16Gb H5ANAG8NDMR-class parts; verify rank configuration, ODT settings, and refresh intervals (including 2x/4x temperature-compensated refresh above 85C ambient chassis zones) against the platform BIOS memory reference code.
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Industrial PCs and Embedded Controllers
Industrial PCs, edge controllers, and factory-automation gateways use the H5AN8G8NCJR-VKC where 0C to +85C commercial-industrial temperature coverage suffices. The 8Gb device provides 1 GB of DRAM per chip, letting a two-chip design reach 2 GB of 64-bit memory on a compact board. Features such as auto self-refresh preserve memory contents during low-power standby, and dynamic ODT simplifies fly-by topology routing on dense PCBs. Designers should keep the DDR4 bus short (under ~100 mm), length-match DQS to DQ within +/-25 mils, and confirm the controller's ZQ calibration timing; industrial ambient vibration is not a factor for BGA solder joints at these ball pitches when proper reflow profiles are used.
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Networking and Telecom Equipment
Routers, switches, and 5G small-cell equipment demand sustained packet-buffer bandwidth that the H5AN8G8NCJR-VKC delivers through its DDR4-2666 interface. The 1G x 8 organization suits 64-bit or 72-bit (with ECC) buses using eight or nine devices respectively, and the CRC function plus data mask support align with telecom packet-buffer controller requirements. Typical operating current near 30 mA per device allows dense buffer arrays within the power budget of fanless networking hardware. Because network equipment often runs continuously at elevated internal temperatures, verify junction margins at +85C ambient, enable temperature-compensated refresh, and validate AC timing with the platform memory controller's training algorithms under worst-case DQ loading.
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Set-Top Boxes and Smart TVs
Set-top box and smart-TV SoC platforms with DDR4 controllers commonly reference 8Gb x8 DRAM such as the H5AN8G8NCJR-VKC for 1 GB-class system memory. The device's 1.2V operation reduces total platform power compared with DDR3 solutions, supporting energy-star style standby budgets, while auto self-refresh keeps frame buffers and application memory alive in low-power suspend modes. Its 78-ball FBGA enables compact two-chip (2 GB) layouts behind the SoC. Layout guidance: keep the memory within 60 mm of the SoC, use daisy-chained address routing with on-chip termination, and follow the SoC vendor's DDR4 layout guideline for ZQ ball placement and reference-plane continuity to pass DDR margin testing.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use DDR4 SDRAM such as the H5AN8G8NCJR-VKC for deep acquisition-memory capture buffers. The 2666 Mbps data rate sustains streaming write bandwidth into capture memory, while the 8Gb density extends record length per chip. CRC and write leveling support reliable operation on the electrically long buses typical of instrument mainboards, and the asynchronous reset pin allows deterministic clearing between acquisitions. For thermal design, budget the ~30 mA operating current per device plus I/O power; a nine-device 72-bit array dissipates roughly 0.3 W of core power (estimated), which is manageable with board-level copper pours. Verify refresh timing against the instrument controller's memory-training firmware.
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추천 제품 요약
엔지니어링 참조 데이터: H5AN8G8NCJR-VKC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN8G8NAFR-VKC | H5AN8G8NCJR-UHC | K4A8G085WC-BCWE | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same (JEDEC DDR4 x8 footprint) | FBGA-78 - same (JEDEC DDR4 x8 footprint) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung Electronics | Micron Technology |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Special Features | Auto self-refresh, dynamic ODT, CRC, write leveling, ZQ cal | Same JEDEC DDR4 feature set | Same feature set, faster bin | JEDEC DDR4 feature set | JEDEC DDR4 feature set |
주요 차별점
- Balanced mainstream speed/density bin (vs H5AN8G8NCJR-PBC)
- Lower cost at reduced speed (vs H5AN8G8NCJR-UHC)
- Second-source availability (vs K4A8G085WC-BCWE)
설계 노트
DDR4-2666 fly-by topology requires strict length control: keep address/command stubs minimal, route clock pairs differentially with intra-pair skew under 5 mils, and match DQS to its DQ byte lane within +/-25 mils. Enable dynamic ODT for reads and writes per the controller's training algorithm, and land the ZQ ball with a dedicated 240-ohm 1% resistor to a clean ground island, isolated from switching noise. Run SI simulation (IBIS models available from SK hynix) at worst-case corner before tape-out.
Provide 1.14V-1.26V VDD with a dedicated DDR4 PMIC rail and bulk (100 uF) plus local decoupling (0.1 uF and 0.01 uF) at every second ball cluster. Do not forget the VPP rail (2.5V nominal on JEDEC platforms) where the controller/module platform requires it. Estimated core dissipation per device at 30 mA x 1.2 V is about 36 mW, so thermal design for small arrays is dominated by I/O switching power - size copper pours per platform guideline rather than core power.
Do not mix CJR and AFR die revisions on the same rank without re-running memory training - timing tables differ slightly. Confirm the speed bin suffix (-VKC = 2666/0-85C) matches the controller's programmed CAS latency; under-binning wastes bandwidth, over-binning causes training failures. Always connect RESET# (asynchronous reset) to the controller, never leave it floating, and respect the ZQ calibration interval programmed in MR registers.
Use a solid, unbroken reference plane under all DDR4 nets; avoid splitting VDD/VSS planes beneath the bus. Keep the memory within 100 mm of the controller, prefer HDI microvias for escape routing from the 0.8 mm-pitch FBGA-78 ball field, and follow the SoC or memory-controller vendor's DDR4 layout checklist for trace impedance (40 ohm single-ended, 80 ohm differential typical). Back-drill long via stubs on 8+ layer boards to preserve eye margin at 2666 Mbps.
규정 준수 정보
RoHS compliance per LCSC/JLCPCB product listings. REACH, halogen-free, and conflict-minerals declarations not stated in provided data - request documentation from SK hynix.
