K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung
부품 번호: K4AAG085WM-BCRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
K4AAG085WM-BCRC 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> memory subsystem of a computing platform. Compared with DDR3, DDR4 lowers the core supply to 1.2V (about 25% lower power per Samsung), uses a bank-group architecture, and raises pre-fetch and data-rate limits, making it the dominant main-memory technology in servers, desktops, and embedded controllers.
Key family features include the 1.2V VDD supply with separate 1.2V VDDQ, on-die termination (ODT), bank-group architecture with up to 16 banks, programmable CAS latency, and a CRC/CA parity option on the command/address bus. The x8 organization simplifies layout versus x16 variants at equal density and matches ECC-native memory controllers. The -BCRC speed suffix denotes one of Samsung's DDR4 speed grades; the 'B' die/grade codes identify the fab process generation used by Samsung for its DDR4 lineup.
Technically, DDR4 SDRAM synchronizes all operations to a differential clock (CK/CK#) and transfers two data words per clock cycle on the DQ bus. Samsung's DDR4 devices integrate DLL-based output timing, a 1.2V SSTL12 I/O interface, and thermal features that support reliable operation in dense memory subsystems.
Typical applications include server DIMMs and memory-down designs on x86 and ARM platforms, industrial gateways, networking line cards, and FPGA-based processing boards that use DDR4 memory controllers.
Design consideration: always follow Samsung's layout guidance for length-matched, impedance-controlled DQ/CA routing (typically 40-ohm on-die-terminated nets) and verify the exact speed grade and CAS latency mapping of the -BCRC suffix in the official datasheet before finalizing the memory controller configuration.
This page synthesizes distributor stock data, same-family drop-in alternatives, and design notes not found in the manufacturer datasheet.
드롭인 대체품: K4AAG085WM-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4AAG085WM-BCRC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, Operating Temperature, Density, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4AAG085WM-BCTD
✅ 드롭인✓ 재고 있음
$9.95 / 개
데이터시트 보기 →K4AAG085WA-BCRC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.1 / 개
데이터시트 보기 →K4AAG085WA-BCWE
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$7.24 / 개
데이터시트 보기 →K4AAG085WA-BCTD
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$10.18 / 개
데이터시트 보기 →K4AAG085WA-BCPB
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.92 / 개
데이터시트 보기 →K4AAG085WM-BCRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 구성 | x8 |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| 인터페이스 | SSTL12 |
| 패키지 | 78-ball FBGA |
| 실장 유형 | Surface Mount |
| Architecture | Bank-group DDR4 |
| Termination | On-Die Termination (ODT) |
| Clock | Differential clock CK/CK# |
K4AAG085WM-BCRC 78-ball fbga 핀 구성 가이드
K4AAG085WM-BCRC(78-ball fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4AAG085WM-BCRC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4AAG085WM-BCRC 적합 용도: 6 애플리케이션s: Server Main Memory (Memory-Down), Embedded Industrial Controllers, Networking Line Cards, FPGA Processing Boards, Desktop and Client Computing, Test and Measurement Instruments.
Server Main Memory (Memory-Down)
Server platforms require large, reliable main-memory arrays with ECC support. The K4AAG085WM-BCRC's x8 organization is the standard width for ECC computation, and its 1.2V supply with DDR4 bank-group architecture matches modern server memory controllers from Intel and AMD. Placed directly on the board (memory-down) in a 78-ball FBGA footprint, it eliminates SO-DIMM/U DIMM connectors, saving height and improving signal integrity for high data rates up to the family's 3200 Mbps/pin. Designers must implement fly-by command/address routing, on-die termination, and controller read/write training to meet DDR4 timing margins at these speeds.
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Embedded Industrial Controllers
Industrial gateways, PLCs, and edge controllers need dense, low-power DRAM for buffering and local processing. The 1.2V operation of the K4AAG085WM-BCRC reduces memory-subsystem power roughly 25% versus equivalent DDR3 solutions per Samsung's DDR4 page, easing thermal design in sealed fanless enclosures. The 78-ball FBGA surface-mount footprint suits automated assembly on standard industrial PCB processes. Because industrial environments see wide temperature swings, verify the operating temperature range and refresh requirements (including 1x/2x/4x refresh modes supported by DDR4) against the Samsung datasheet for the -BCRC grade before finalizing.
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Networking Line Cards
Switch, router, and network-appliance line cards use DDR4 SDRAM for packet buffers, flow tables, and control-plane memory. The K4AAG085WM-BCRC's high per-device density minimizes device count on space-constrained line cards, and the x8 bus width allows parallel devices sharing a common fly-by CA bus with individual chip-selects. The family's 3200 Mbps/pin capability supports the bandwidth demanded by multi-gigabit networking data paths. Careful DQS strobe length matching within plus-or-minus 25 mils and ODT configuration are required to close timing at full data rate; Samsung's DDR4 design guide provides the reference topology for these memory-down networks.
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FPGA Processing Boards
Xilinx/AMD and Intel FPGA boards use hardened DDR4 memory controllers (MIG/EMIF) to attach external DRAM for signal processing, video frame buffers, and acceleration workloads. The K4AAG085WM-BCRC attaches to these hardened PHY blocks through the standard DDR4 interface: differential CK/CK#, CA bus, DQS strobes, and ODT. The 78-ball FBGA x8 part matches the controller's default x8 configuration, simplifying IP setup. Designers must enter the correct speed grade for -BCRC into the memory IP configuration and perform calibration (write leveling, read training) at bring-up; the high density also reduces the number of devices needed per bank group.
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Desktop and Client Computing
Client desktops and workstations use DDR4 SDRAM in both U DIMM modules and memory-down designs. The K4AAG085WM-BCRC can populate module PCBs or be soldered directly on compact client boards where connector height is restricted. Samsung's DDR4 family delivers up to 3200 Mbps/pin at 1.2V, matching mainstream client memory-controller capability. The x8 organization supports standard ECC-off and ECC-on client configurations alike. For module builders, SPD EEPROM data must be programmed with the -BCRC grade's exact timings so BIOS memory training selects valid CAS latency and tRCD/tRP values per the Samsung datasheet.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and protocol analyzers require fast, deep acquisition memory to capture long signal records at high sample rates. The K4AAG085WM-BCRC provides high per-device density and the DDR4 family's high burst bandwidth, letting instruments stream acquisition data into main memory at multi-GB/s rates. Its 78-ball FBGA footprint allows dense stacking of multiple devices around the acquisition ASIC. Instrument designers must account for refresh-induced latency jitter (tRFC windows) in real-time capture paths, typically using FIFO pre-buffering, and should qualify the -BCRC speed grade's timing table against the instrument's memory controller IP.
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추천 제품 요약
엔지니어링 참조 데이터: K4AAG085WM-BCRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4AAG085WM-BCTD | K4AAG085WA-BCRC | K4AAG085WA-BCWE | K4AAG085WA-BCTD |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade | -BCRC | -BCTD | -BCRC (same) | -BCWE | -BCTD |
| Termination | On-Die Termination (ODT) | ODT | ODT | ODT | ODT |
주요 차별점
- Higher per-device density than 8Gb B/C-die parts (vs K4A8G085WC-BCRC)
- x8 organization native to ECC server memory (vs K4AAG165WA-BCRC (x16 variant))
- Multiple same-family speed grades on one footprint (vs K4AAG085WA-BCWE)
설계 노트
DDR4 memory-down layout with the K4AAG085WM-BCRC requires controlled-impedance routing: approximately 40-ohm single-ended DQ/DQS/DM nets and CA nets, with fly-by command/address topology terminated through on-die termination. Keep DQS/DQ length matching within tight skews per Samsung's DDR4 design guide, and place VTT termination with bulk and 0.1uF decoupling capacitors distributed along the CA/DQ nets. The 78-ball FBGA requires via-in-pad or dog-bone escape routing on fine ball pitch; follow IPC and Samsung land-pattern recommendations.
The device operates from 1.2V VDD and 1.2V VDDQ rails; provide separate, well-decoupled supplies or carefully shared planes with sufficient current headroom for simultaneous bank activation bursts. Estimate: peak current depends on density and data rate, so size the VRM using the Samsung datasheet IDD specifications for the -BCRC grade rather than generic family values. Add a VTT terminating rail at 0.6V with fast transient response, since ODT termination current changes abruptly with read/write turnaround.
Do not assume K4AAG (WM die) and K4A8G (B/C die) parts are interchangeable in controller configuration: density, address mapping, and tRFC refresh timing differ between families, and wrong initialization causes silent data corruption. Always program SPD or controller device trees with the exact -BCRC timing table from the current Samsung datasheet revision, and re-run memory training (write leveling, VREF DQ training) at every hardware revision. Samsung reserves the right to change specifications without notice, so re-verify on each new date code.
At data rates approaching the family's 3200 Mbps/pin capability, eye margins shrink rapidly with stub length. Keep DQS/DQ traces short and symmetric, avoid stubs on CA nets, and enable ODT settings (typically RTT_NOM and RTT_WR per the controller's training results) matched to the board topology. Simulate the fly-by CA network with IBIS models from Samsung to confirm monotonic crossing of VIH/VIL at the last device on the bus before committing to PCB fabrication.
규정 준수 정보
Compliance status for the exact K4AAG085WM-BCRC MPN was not stated in the retrieved web data. Request Samsung environmental compliance certificates via your distributor.
